LUIS MIGUEL PRÓCEL

  • Profesor de Ingeniería Electrónica
  • Colegio de Ciencias e Ingenierías, Politécnico
  • 297-1700 ext 1226
  • lprocel@usfq.edu.ec

ESTUDIOS

  • Dottore di Ricerca in Scienze e Tecnologie dei Sistemi Complessi, Universita della Calabria
  • Master Universitario en Tecnologías de la Información, la Comunicación y Medios Audiovisuales, Universitat Pompeu Fabra
  • Ing. Electrónica, Universidad San Francisco de Quito
  • Lic. Física, Universidad San Francisco de Quito

EXPERIENCIA LABORAL

Jefe Técnico de Radiofrecuencia, RTVECUADOR E.P.
( 2010 - 2011 )
Diseño de sistemas de radiosdifusión sonora y de televisión. Mantenimiento preventivo y correctivo de estaciones de radiodifusión Administración de proyectos de telecomunicaciones

PUBLICACIONES

Binarization Methodology Applied to Digital Images of Petroglyphs from Cueva del Diablo of Manabí
Comparison of Different Technologies for Transistor Rectifiers Circuits for Micropower Energy Harvesters
Hardware Implementation of a Shape Recognition Algorithm based on Invariant Moments
Implementation and Comparison of a Fast Shape Recognition Algorithm using Different FPGA Platforms
Microprocessor Design with a Direct Bluetooth Connection in 45 nm Technology Using Microwind
New Insight for next Generation SRAM: Tunnel FET versus FinFET for Different Topologies
Power and Area Reduction of MD5 based on Cryptoprocessor Using novel approach of Internal Counters on the Finite State Machine
TFET and FinFET Hybrid Technologies for SRAM Cell: Performance Improvement over a Large VDD-Range
Implementation and optimization of the algorithm of automatic color enhancement in digital images
Mobility extraction for 24-nm-channel length n-MOS using the RFCV technique: Effect of the fabrication process
On the parameter extraction of short channel UTBB- FDSOI FET’s with high- metal gate and TCAD modelling
Physical Models for Resistive Switching Devices
Statistical study of SiON short MOSFET under Channel Hot Carrier Stress
Temperature study of defect generation, under channel hot carrier stress for 35-nm gate length MOSFETs using the Defect Centric perspective
A Defect-Centric Analysis of the Temperature Dependence of the Channel Hot Carrier Degradation in nMOSFETs
Remote control of VNA and parameter analyzer for RFCV Measurements using Python
Study Of The Scaling And The temperature For RERAM Cells Using The QPC Model
A Defect-Centric perspective on channel hot carrier variability in nMOSFETs
A Defect-Centric Perspective on Channel Hot Carrier Variability in nMOSFETs
Origins and Implications of Increased Channel Hot Carrier Variability in nFinFETs
Defect-Centric Distribution of Channel Hot Carrier Degradation in nMOSFETs
TCAD Simulation for ultrathin body and buried oxide fully depleted silicon-on-insulator MOSFET: a comparison between COMSOL and Sentaurus
A DFT Study of the Components of a Hf/HfO2/TiN three-layer stack
DC and low-frequency noise behavior of the conductive filament in bipolar HfO2-based resistive random access memory
Experimental evidence of the quantum point contact theory in the conduction mechanism of bipolar HfO2-based resistive random access memories
Mobility extraction in ultra thin, body buried oxide and fully depleted silicon-on-insulator MOSFET
Detección y Agrupación de Logos
Desarrollo de una aplicación de Servicios Basados en Localización para redes celulares de tipo Global System for Mobile (GSM) y Universal Mobile Telecomunications System (UMTS) usando el emulador Mobile Positioning System 6.0.1 proveído por la empresa E
Hydrogen impurity in SrTiO3: structure, electronic properties and migration
Mott-Wannier excitons in the tetragonal BaTiO3 lattice
Structural and electronic properties of PbZrxTi1-xO3 (x=0.5, 0.375): a quantum-chemical study
Structural properties of PbTiO3 and PbZrxTi1-xO3: a quantum-chemical study

INTERESES

Micro y Nanoelectrónica, Dispositivos Electrónicos, Circuitos integrados, Procesamiento de Imágenes Digitales y Visión por Computadora